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August 19, 2015
August 20, 2015
August 21, 2015
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Room A (325)
Room B (324)
Room C (323)
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Room A (Room 325)
55. Advanced TFT Backplane Technologies VI
August 21, 2015 (Friday)
15:30 ~ 16:55
[55-1]
15:30 ~ 15:55
Room A (Room 325)
[Invited] Poly-Si TFTs with One-Dimensionally Long Silicon Crystal Grains Using DLB Continuous-Wave Laser Lateral Crystallization
Shin-Ichiro Kuroki, Tatsuaki Hirata, Nguyen Thuy Thi (Hiroshima Univ., Japan), Koji Kotani (Tohoku Univ., Japan), and Takamaro Kikkawa (Hiroshima Univ., Japan)
[55-2]
15:55 ~ 16:10
Room A (Room 325)
Low-Temperature Activation Engineering by Simultaneous UV and Thermal Treatment in Sputter Processed IGZO Thin-Film Transistors
Young Jun Tak, Sung Pyo Park, Tae Soo Jung, Heesoo Lee, Won-Gi Kim, Jeong Woo Park, Na Eun Kim, and Hyun Jae Kim (Yonsei Univ., Korea)
[55-3]
16:10 ~ 16:25
Room A (Room 325)
Effect of Low Temperature Annealing of Sputtered SiO2 for Gate Insulator in Poly-Si TFTs
Hikaru Tamashiro, Kimihiko Imura, Tatsuya Okada, and Takashi Noguchi (Univ. of the Ryukyus, Japan)
[55-4]
16:25 ~ 16:40
Room A (Room 325)
Crystallization of Silicon Films with Carbon Nanotube Electron Beam (C-beam)
Ha Rim Lee, Su Woong Lee, Jung Su Kang, Ji Hwan Hong, Callixte Shikili, Min Tae Chung, and Kyu Chang Park (Kyung Hee Univ., Korea)
[55-5]
16:40 ~ 16:55
Room A (Room 325)
Reduction of Leakage Current of Poly-Si TFTs with Metal Source/Drain by Dual Gate Structure
Taisei Harada, Takuya Ashitomi, Kiyoharu Shimoda, Wataru Narisoko, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus, Japan), Osamu Nishikata, Atsushi Ota, Kazuya Saito (ULVAC, Inc., Japan), Sang-Yun Kim, Jin-Kuk Kim, and Byung Seong Bae (Hoseo Univ., Korea)
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