Date
Place
- Room A (Room 325)
- 55. Advanced TFT Backplane Technologies VI
- August 21, 2015 (Friday)
- 15:30 ~ 16:55
- [55-1]
- 15:30 ~ 15:55
- Title:[Invited] Poly-Si TFTs with One-Dimensionally Long Silicon Crystal Grains Using DLB Continuous-Wave Laser Lateral Crystallization
- Shin-Ichiro Kuroki, Tatsuaki Hirata, Nguyen Thuy Thi (Hiroshima Univ., Japan), Koji Kotani (Tohoku Univ., Japan), and Takamaro Kikkawa (Hiroshima Univ., Japan)
Abstract: Poly-Si thin films with large one-dimensionally long silicon crystal grains were fabricated by continuous-wave laser lateral crystallization with double-line laser beam (DLB-CLC). The silicon grains had crystal orientation of {110}, {111} and {211} in the laser lateral crystallized plane, the transverse side plane and the surface plane, respectively. All the silicon grains were elongated in the laser-scanning direction and linearly arranged with a length of over 100 ¥ìm and a width of 0.7 ¥ìm. Poly-Si TFTs with the well-crystal oriented poly-Si thin films were fabricated at low temperature (?550 o C) with a metal gate self-aligned process. High field-effect mobility of 560 cm2/Vs was achieved, and its variation was within 10% at same crystallization region.
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