Date
Place
- Room A (Room 325)
- 55. Advanced TFT Backplane Technologies VI
- August 21, 2015 (Friday)
- 15:30 ~ 16:55
- [55-4]
- 16:25 ~ 16:40
- Title:Crystallization of Silicon Films with Carbon Nanotube Electron Beam (C-beam)
- Ha Rim Lee, Su Woong Lee, Jung Su Kang, Ji Hwan Hong, Callixte Shikili, Min Tae Chung, and Kyu Chang Park (Kyung Hee Univ., Korea)
Abstract: We introduced the mechanism of carbon nanotube electron beam?(C-beam) exposure techniqueis and observed the silicon thin film crystallized by C-beam. CNT emitters growb by resist-assisted patterning (RAP) process is used for the source of electron beam. High energy electron beams transfer their energy to the silicon network, resulting in network relaxation and crystallization. We confirm the high crystallinity of silicon thin films through the RAMAN spectroscopy. The grain size distribution of silicon thin films about 5~20 nm as a result of SEM measurement. We expect that this film will be a good replacement as a new active layer of thin film transistors (TFTs).
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