Date

Place

[55-5]
16:40 ~ 16:55
Title:Reduction of Leakage Current of Poly-Si TFTs with Metal Source/Drain by Dual Gate Structure
Taisei Harada, Takuya Ashitomi, Kiyoharu Shimoda, Wataru Narisoko, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus, Japan), Osamu Nishikata, Atsushi Ota, Kazuya Saito (ULVAC, Inc., Japan), Sang-Yun Kim, Jin-Kuk Kim, and Byung Seong Bae (Hoseo Univ., Korea)
Abstract: LTPS (Low Temperature Poly-Silicon) TFTs (Thin Film Transistors) with high mobility have a number of advantages for O-LED (Organic-Light Emitting Diode) pixel and for LCD (Liquid Crystal Display) such as low power consumption and integrating functional circuits on a panel. Recently, BLDA (Blue Laser Diode Annealing) was reported as a next generation LTPS process. BLDA can heat up the thin Si film uniformly by slightly deeper penetration depth than UV laser and is expected to obtain uniform grain size with reduced surface roughness.? Also, our group has proposed and shown simple TFT structure with metal source/drain without using impurity doping. Although Si TFT with metal source/drain of Ti is expected to reduce the fabrication cost, leakage current seems to be rather higher than conventional doped source/drain. Dual-gate TFT structure of series connection is expected to be effective for reducing the off leak current.
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