Program
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August 19, 2015
August 20, 2015
August 21, 2015
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ALL PLACE
Room A (325)
Room B (324)
Room C (323)
Room D (322)
Room E (321)
Room F (320)
Room G (306)
Room H (Hall 1, 1F)
Room A (Room 325)
48. Advanced TFT Backplane Technologies V
August 21, 2015 (Friday)
11:00 ~ 12:45
[48-1]
11:00 ~ 11:25
Room A (Room 325)
[Invited] Flexible Metal-Oxide Thin-Film Transistors with Organic Gate Insulators
Hsing-Hung Hsieh, Shiuan-Iou Lin (Polyera Taiwan Corp., Taiwan), William C. Sheets, Su Jin Kang (Polyera Corp., U.S.A.), Wan-Yu Hung (Polyera Taiwan Corp., Taiwan), Scott Bull, Antonio Facchetti (Polyera Corp., U.S.A.), and Chung-Chin Hsiao (Polyera Taiwan Corp., Taiwan)
[48-2]
11:25 ~ 11:50
Room A (Room 325)
[Invited] Stability Issues in P-Channel Tin Monoxide Thin-Film Transistors
Hyuck-In Kwon, Young-Joon Han, Yong-Jin Choi, and Chan-Yong Jeong (Chung-Ang Univ., Korea)
[48-3]
11:50 ~ 12:15
Room A (Room 325)
[Invited] Vertical Organic Field Effect Transistors (V-OFETs) for Truly Flexible Displays
Andreas Haldi (Novaled GmbH, Korea), Hans Kleemann, Gregor Schwartz, Mauro Furno, and Jan Blochwitz-Nimoth (Novaled GmbH, Germany)
[48-4]
12:15 ~ 12:30
Room A (Room 325)
Low Contact Resistance a-IGZO TFT Based on Copper-Molybdenum Source/Drain Electrode
Shi-Ben Hu, Hong-Long Ning, Feng Zhu, Rui-QiangTao, Xian-Zhe Liu, Yong Zeng, Ri-Hui Yao, Lei Wang, Lin-Feng Lan, and Jun-Biao Peng (South China Univ. of Tech., China)
[48-5]
12:30 ~ 12:45
Room A (Room 325)
Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
KyoungWoo Park, YunYong Nam, KwangHum Lee, GumBi Mun, JongBum Ko, HyeIn Yeom, and Sang-Hee Ko Park (KAIST, Korea)
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