Date

Place

Room A (Room 325)
48. Advanced TFT Backplane Technologies V
August 21, 2015 (Friday)
11:00 ~ 12:45

[48-2]
11:25 ~ 11:50
Title:[Invited] Stability Issues in P-Channel Tin Monoxide Thin-Film Transistors
Hyuck-In Kwon, Young-Joon Han, Yong-Jin Choi, and Chan-Yong Jeong (Chung-Ang Univ., Korea)
Abstract: P-type oxide thin-film transistrors (TFTs) have the potential to initiate a new era of oxide TFT-based electronics by allowing the implementation of complementary logic circuits with high-performance n-type oxide TFTs. Since Ogo et al., tin monoxide (SnO) has attracted special attention as a channel material for p-type oxide TFTs due to the potential for high hole mobilities. To date, various researches have been conducted to fabricate high-performance p-type SnO TFTs. In this presentation, we will summarize the present status of p-type SnO TFTs, and will report our recent research results on the stability issues in p-type SnO TFTs. The stability of oxide TFTs generally depend on the ambient atmospheric condition, subgap states in oxide semiconductors, and? dielectric/channel interface properties. In our work, we investigate the effects of environmental water and oxygen on the electrical performance and stability of p-type SnO TFTs, and present the effective method for the passivation of SnO TFTs using a SU-8 organic layer.?We also extract the subgap density of states in fabricated SnO TFTs, and compare the obtained results with those from the conventional n-type a-IGZO TFTs. Finally, we examine the effects of gate dielectric on the electrical performance and stability in p-type SnO TFTs.
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