Date

Place

Room A (Room 325)
48. Advanced TFT Backplane Technologies V
August 21, 2015 (Friday)
11:00 ~ 12:45

[48-1]
11:00 ~ 11:25
Title:[Invited] Flexible Metal-Oxide Thin-Film Transistors with Organic Gate Insulators
Hsing-Hung Hsieh, Shiuan-Iou Lin (Polyera Taiwan Corp., Taiwan), William C. Sheets, Su Jin Kang (Polyera Corp., U.S.A.), Wan-Yu Hung (Polyera Taiwan Corp., Taiwan), Scott Bull, Antonio Facchetti (Polyera Corp., U.S.A.), and Chung-Chin Hsiao (Polyera Taiwan Corp., Taiwan)
Abstract: In this work, we demonstrate a new photo-patternable and thermally stable organic gate insulator platform for high performance IGZO TFTs.? The new organic gate insulator exhibits several key technological advantages such as low leakage current (~10 nA/cm2 at 2 MV/cm), high breakdown voltages, good mechanical flexibility (functions at radius less than 1 cm), photo-patternability (5~10 ��m), and substantial temperature stability (up to temperature of 300 oC), considerable adhesion, and high transparency (>97% in visible).? In addition, we have also explored various TFT device architectures to optimize the device architecture specifically for IGZO transistors with an organic gate insulator.? Our devices were first optimized on glass substrates, then the process flow was transferred to plastic substrates, with both platforms exhibiting good and similar performance (e.g., high mobility of ~15 cm2/Vs).? Finally, we compared the performance of the Polyera OGI-based IGZO TFTs to those TFTs based on conventional organic dielectrics, demonstrating the great potential of our materials both in term of device performance and manufacturability.
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