Program
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Date
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August 19, 2015
August 20, 2015
August 21, 2015
Place
ALL PLACE
Room A (325)
Room B (324)
Room C (323)
Room D (322)
Room E (321)
Room F (320)
Room G (306)
Room H (Hall 1, 1F)
Room C (Room 323)
10. LEDs and Lighting II
August 19, 2015 (Wednesday)
14:00 ~ 15:30
[10-1]
14:00 ~ 14:25
Room C (Room 323)
[Invited] Enhancement in Light-Extraction Efficiency of Deep Ultraviolet Light-Emitting Diodes by Utilizing Transverse-Magnetic-Dominant Emission
Jong Won Lee, Dong Yeong Kim, Jun Hyuk Park (POSTECH, Korea), Jungsub Kim, Yong-Il Kim, Youngsoo Park (Samsung Electronics Co., Ltd., Korea), E. Fred Schubert (Rensselaer Polytechnic Inst., U.S.A.), and Jong Kyu Kim (POSTECH, Korea)
[10-2]
14:25 ~ 14:50
Room C (Room 323)
[Invited] Improvements in High-Voltage LEDs and Applications
Ping-Chen Wu, Sin-Liang Ou, and Dong-Sing Wuu (Nat'l Chung Hsing Univ., Taiwan)
[10-3]
14:50 ~ 15:15
Room C (Room 323)
[Invited] Transforming Conductive GaN:Si Epitaxial Layers into Nanoporous GaN and Insulating GaOx Layers for III-nitride Photonic Devices
Chia-Feng Lin, Wen-Che Lee, and Yuan-Chang Jhang (Nat'l Chung Hsing Univ., Taiwan)
[10-4]
15:15 ~ 15:30
Room C (Room 323)
Theoretical Simulation of Metal Mesh Structure with Graphene for Transparent Conductive Layers of GaN-Based Light-Emitting Diodes
Sang-Bae Choi, Jung-Hong Min, and Dong-Seon Lee (GIST, Korea)
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