Date
Place
- Room C (Room 323)
- 10. LEDs and Lighting II
- August 19, 2015 (Wednesday)
- 14:00 ~ 15:30
- [10-4]
- 15:15 ~ 15:30
- Title:Theoretical Simulation of Metal Mesh Structure with Graphene for Transparent Conductive Layers of GaN-Based Light-Emitting Diodes
- Sang-Bae Choi, Jung-Hong Min, and Dong-Seon Lee (GIST, Korea)
Abstract: GaN-based LEDs have recently been focused in the various fields such as solid-state lighting, automobile and back-light units, which are required with longer lifetime, higher efficiency and better energy savings. [1] Commonly, transparent conductive layers (TCLs) are essential for GaN-based LEDs due to the lower conductivity of p-GaN layers. Indium tin oxide (ITO) is one of the commonly used material for TCLs because it shows surpassing transparency, sheet resistance and so on. Nevertheless, the increase of the indium price by lack of resource, alternative materials and structures for TCLs such as graphene layer with a metal mesh structure are suggested to replace the ITO TCLs. [2] In this paper, we performed a theoretical simulation of the metal mesh structure combined with graphene for TCLs of GaN-based LEDs. Using COMSOL Multiphyics with finite-element method, we solve the continuity equation. We compared the current density distribution of four types of TCLs: (1) a 200 nm-thick ITO layer, (2) graphene layer, (3) metal mesh structure on graphene, and (4) metal mesh structure covered with graphene. The metal mesh structure has a 150? ¥ìm gap with 5 ¥ìm width and 200 nm height.
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