Date
Place
- Room C (Room 323)
- 10. LEDs and Lighting II
- August 19, 2015 (Wednesday)
- 14:00 ~ 15:30
- [10-3]
- 14:50 ~ 15:15
- Title:[Invited] Transforming Conductive GaN:Si Epitaxial Layers into Nanoporous GaN and Insulating GaOx Layers for III-nitride Photonic Devices
- Chia-Feng Lin, Wen-Che Lee, and Yuan-Chang Jhang (Nat'l Chung Hsing Univ., Taiwan)
Abstract: We report a simple and robust process to convert embedded conductive GaN epilayers into insulating GaOx. The fabrication processes consist of laser scribing, electrochemical (EC) wet-etching, photoelectrochemical (PEC) oxidation, and thermal oxidization of a sacrificial n+-GaN:Si layer. The conversion of GaN is made possible through an intermediate stage of porosification where the standard n-type GaN epilayers can be laterally and selectively anodized into a nanoporous (NP) texture while keeping the rest of the layers intact. The observation of aperture-confined electroluminescence from an InGaN LED structure suggests that the NP GaN based oxidation will play an enabling role in the fabrication of nitride photonic devices.
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