Date

Place

[P2-90]
14:00 ~ 15:30
Title:Improved Performance of CdSe/ZnS Quantum Dots Light-Emitting Devices by Atomic Surface Modulation
Jae-Sung Lee, Byoung-Ho Kang, Sang-Won Lee, Sai-Anand Gopalan, Ju-Seong Kim, Sae-Wan Kim, Seung-Hwan Cha, Jun-Woo Lee, and Shin-Won Kang (Kyungpook Nat'l Univ., Korea)
Abstract: QLED has received attention as the next generation display because QDs used for electroluminescence devices allow for both the tuning of the emission color by changing the QD size and enhanced color purity. It is also possible to simplify the solution process. Recently, many researchers reported on QLEDs manufactured using TiO2 nanoparticles as the electron transport layer and confirmed the probability of a solution process. However, the effect of interface between QDs and ZnO NPs by through CTAB treatment was not yet reported. The Br- halide anion of CTAB could be provides not only reducing CdSe/ZnS QDs inter-particle spacing but also increasing carrier transport from ZnO NPs. In this study, to evaluate effect on halide Br- anion on QDs as shortly inorganic ligands, we adopted CTAB and the halide anion of Br- was coordinated on CdSe/ZnS QD film by nucleophilic nature. Consequently, the QLED with CTAB was shown a maximum luminance of 36,000 cd/m2 and achieved a maximum? current efficiency of 9.5 cd/A. The luminance and external current efficiency were enhanced by over 1.6 times compared to QLED without CTAB.
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