Date

Place

Room H (Room Hall 1, 1F)
P2. Poster Session II
August 21, 2015 (Friday)
14:00 ~ 15:30

[P2-34]
14:00 ~ 15:30
Title:Enhanced Hole Injection in DNTT-Based Thin Film Transistors by Using MoOx Interfacial Layer
Heebum Roh, Jeongkyun Roh, Hyeonwoo Shin, Hyeok Kim, and Changhee Lee (Seoul Nat'l Univ., Korea)
Abstract: One of the commonly utilized organic semiconducting materials, which is pentacene, is easily oxidized so that suffers from this stability issue in OTFTs. In order to avoid air induced oxidation, newly synthesized semiconductors with large ionization potential, such as dinaphtho[2,3-b:2��,3��-f]thieno[3,2-b]thiophene (DNTT), have been introduced and implemented into a variety of applications such as organic memory and sensor. Nonetheless, the large ionization potential induces deeper highest occupied molecular orbital (HOMO) in the semiconductors so that typical contact metals such as gold (Au) and silver (Ag) may not form ohmic contact due to the energy level misalignment between metal and semiconductor. In this study, we investigated the contact property of the DNTT-based TFTs with various contact metals such as gold (Au) and aluminum (Al) with molybdenum oxide (MoOx) as an interlayer. Hydrophobic polymer (Cyclic olefin copolymer, COC) was adopted for the modification of SiO2 surface rather than self-assembled monolayer (SAM) to acquire homogeneous performance among various devices. Field-effect mobility, surface trap density, contact resistance, bias stability of the DNTT-based TFTs with various contacts were characterized and compared to investigate the contact effect. The DNTT-based TFTs with MoOx/Au contact exhibited the 5-fold increase in field-effect mobility and 10-fold decrease in contact resistance in comparison with the TFTs with bare Au contact..
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