Date

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[P2-23]
14:00 ~ 15:30
Title:Effect of Ambient Annealing on Electrical Characteristics of ZnO TFTs with AZO Interlayer
Ki-Yun Eom, Yu-Mi Kim, Ho-Jin Yun, Seung-Dong Yang, Jin-Seob Kim, and Ga-Won Lee (Chungnam Nat'l Univ., Korea)
Abstract: In this study, we investigate the ambient annealing effect of ZnO TFTs with AZO interlayer comparing with the conventional ZnO TFTs. All TFTs were annealed in a furnace at 250oC for 1hour in the different ambient of N2, air and O2. ?Here, the gate bias is shifted by the difference in threshold voltage between annealing ambient to emphasize the subthreshold properties. It is known that the native point defects in ZnO like oxygen vacancies, Zn interstitials contribute to the carrier concentration, but can act deep trap sites. When the devices are annealed in the oxygen ambient, the oxygen vacancy can be cured lowering the deep trap density with the carrier concentration. This theory explains well our experimental results like as the sub-threshold slope improvement and the positive threshold voltage shift in the case of Air and O2 ambient. However, the amount of annealing effect on AZO interlayer TFTs is not the same with the conventional ZnO TFTs, which will be investigated focusing the mobility scattering mechanism.?
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