Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-47]
- 14:00 ~ 15:30
- Title:Characterization and Optimization of Plasma-Enhanced Chemical Vapor Deposited SiO2 Film as a Hydrogen Diffusion Barrier in Metal Oxide Thin-Film Transistors
- Sung Haeng Cho, Hee-Ok Kim, Oh-Sang Kwon, Eun-Sook Park, Jong-Heon Yang, Chi-Sun Hwang (ETRI, Korea), and Sang-Hee Ko Park (KAIST, Korea)
Abstract: In this study, we optimized the process parameters of PECVD SiO2 film to use it as a diffusion barrier of hydrogen coming from upper SiNx 200 nm. We find that the SiO2 50 nm deposited at high pressure exhibits good barrier performance even at 350 oC annealing for 2hrs without making IGZO TFT conductive, while SiO2 50 film deposited at low pressure permits some hydrogen to enter into the IGZO from SiNx so that the Vth of IGZO TFT becomes negative or the switching behavior disappears at the current gate bias range.
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