Date

Place

Room H (Room Hall 1, 1F)
P1. Poster Session I
August 20, 2015 (Thursday)
14:00 ~ 15:30

[P1-39]
14:00 ~ 15:30
Title:Positive Bias Stress in Flowing Drain Current-Induced Degradations in Self-Aligned Top-Gate a-IZO TFTs
Sungju Choi, Jonghwa Kim, Jungmok Kim, Jun Tae Jang, Hara Kang, Dong Myong Kim, Sung-Jin Choi (Kookmin Univ., Korea), Jae Chul Park (Samsung Advanced Inst. of Tech., Korea), and Dae Hwan Kim (Kookmin Univ., Korea)
Abstract: Drain current-flowing stress is the most important instability of oxide thin-film transistor (TFT)-driven backplanes in active-matrix organic light-emitting diode (AMOLED) displays. It has been worthy of notice very recently and especially a deep understanding of instability in oxide TFTs under AMOLED operation condition has become a critical issue for commercializing the oxide TFTs technology.?In this work, the current-flowing stress-induced degradation in the self-aligned top-gate indium-zinc-oxide (IZO) TFTs is investigated and the related mechanisms are discussed with self-heating effect, i.e., the positive bias stress condition(VDS/VGS = 13V/13V).?As the stress time increased, it was found that the frequency-dispersion of C-V characteristics, the negative shift of threshold voltage in forward mode(DVTF) and in S/D interchange reverse mode(DVTR) became prominently different due to the various temperature and width by local joule-heating.?This finding was consistent not only with the current-flowint stress time-evolutions of I-V and C-V characteristics and local degradation near the drain region, but also with various temperature and width as well. We will demonstrate the instability of a-IZO TFTs under self-heating condition.
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