Date

Place

[P1-35]
14:00 ~ 15:30
Title:Electrical Properties of MoS2 TFTs with Different Layer Thickness
Ji Heon Kim, Tae Ho Kim, Na Liu, Jun Ho Ye, and Cheol Jin Lee (Korea Univ., Korea)
Abstract: Molybdenum disulfide(MoS2) which is one of dichalcogenide materials, indicates semiconducting with a? bandgap of 1.2 ~ 1.8 eV and it has unique electrical properties. These materials also apporopriate for flexible and transparent electronics and optical devices. Because of this reason, recently, MoS2 was used for channel materials of TFTs.?In this paper, we fabricated the thin-film transistors with MoS2 as a channel material on a SiO2/Si substrate. MoS2 layers were exfoliated by mechanical exfoliation method, and transferred onto SiO2/Si substrate. After separating several different thickness of MoS2, the thickness and numbers of layer of MoS2 were checked by Atomic Force Microscopy(AFM), Raman spectroscopy and Photoluminescence(PL) measurement.?Thin-film transistors with different number of MoS2 layer(1-layer, 3-layer, 6-layer, 10-layer) as a channel region were fabricated by photolithography using electron-beam evaporator(E-Beam evaporator), and we measured their electrical properties. In conclusion, the highest electron mobility was obtained at 6-layered MoS2 TFT, and threshold voltages were decreased as thickness of MoS2 is higher.
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