Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-28]
- 14:00 ~ 15:30
- Title:Large-Area Synthesis of MoS2 Thin Films by Atomic Layer Deposition
- Jung Joon Pyeon, Cheol Jin Cho, Soo Hyun Kim, Chong-Yun Kang, and Seong Keun Kim (KIST, Korea)
Abstract: We deposited MoS2 thin films on SiO2 substrates by ALD using Mo(CO)6 as a Mo source and H2S as a S source. The self-saturation behavior was confirmed and the growth per cycle is 0.24 A/cycle at 160 oC. The temperature window of the ALD of MoS2 films was observed in the range from 160 to 180 oC. The growth per cycle abruptly increased above 180 oC. Although the XRD spectra of the as-grown MoS2 films show no crystalline peak, the Raman spectra clearly show E2g and A1g peaks of MoS2 even at < 1 nm-thick MoS2. (Fig. 1). It was also verified from the XPS analysis that the as-grown films have Mo-S chemical bindings. After annealing at 500 oC under N2 atmosphere, the crystallinity of the MoS2 films was improved, as evidenced by the XRD analysis. We examined the initial growth behavior of MoS2 films to reduce the film thickness down to few MoS2 layers.?
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