Date
Place
- Room A (Room 325)
- 8. 2D Transparent Transistors
- August 19, 2015 (Wednesday)
- 14:00 ~ 15:30
- [8-3]
- 14:50 ~ 15:15
- Title:[Invited] Volume Transport in Dual-Gate Thin-Film Transistors Using Ultra-Thin Amorphous Oxide and Polymer Semiconductors
- Yong Xu and Yong-Young Noh (Dongguk Univ., Korea)
Abstract: Dual-gate thin-film transistors with ultra-thin metal oxide and copolymer semiconductors are fabricated to investigate the volume transport therein. Thinning down the semiconductor film is found to enhance the performance improvements from single-gate to dual-gate mode. Device simulations show that the top- and bottom-gate¡¯s electrical field gets coupled when they approach inducing full depletion and bulk accumulation of charge carriers, which is volume transport. Low-frequency noise helps us evidence the emergence of volume transport and disclose its superiority versus the conventional surface transport. The results offer significant insights into performance optimization of thin-film transistors to achieve better performance for display applications.
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