Date
Place
- Room F (Room 320)
- 53. Flexible/Transparent TFT and Circuitry
- August 21, 2015 (Friday)
- 11:00 ~ 12:35
- [53-4]
- 12:05 ~ 12:20
- Title:Importance of Excess Oxygen on Growth and Carrier Transport of Amorphous In-Ga-Zn-O with Impurity Hydrogen
- Haochun Tang, Kyohei Ishikawa, Keisuke Ide, Hidenori Hiramatsu (Tokyo Inst. of Tech., Japan), Shigenori Ueda (NIMS, Japan), Naoki Ohashi, Hideya Kumomi, Hideo Hosono, and Toshio Kamiya (Tokyo Inst. of Tech., Japan)
Abstract: Amorphous oxide semiconductors represented by amorphous In-Ga-Zn-O (a-IGZO) are promising materials for thin-film transistors (TFTs) due to their large field-effect mobilities (>10 cm2(V¡¤s)-1) and small subthreshold voltage swings (<0.2 V¡¤decade-1). It has been reported a-IGZO films contain impurity hydrogens and its concentration is varied by the base pressure (Pbase) of a deposition chamber, which leads to different film structures, densities, and electrical properties and has clarified some hydrogen species work to passivate defects in a-IGZO. Besides, the roles of hydrogen on subgap states are not understood well. In this work, we fabricated a-IGZO films using two sputtering systems with different Pbase (denoted STD and UHV sputtering for?Pbase?~10-4 Pa and ~10-7 Pa, respectively) and extensively investigated the hydrogen effects by optical absorption coefficient (¥á), hard X-ray photoemission spectroscopy (HAXPES), Hall effect measurement, etc.
PDF Download
Type
