Date

Place

[35-4]
16:45 ~ 17:00
Title:Anomalous Increase of Field-Effect Mobility in In-Ga-Zn-O Thin-Film Transistors Caused by Dry-Etching Damage Through Etching-Stopper
Daichi Koretomo, Tatsuya Toda, Dapeng Wang, and Mamoru Furuta (Kochi Univ. of Tech., Japan)
Abstract: ?In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) have been received great attention for use in next-generation active-matrix displays because it exhibits higher electron mobility (��>10 cm2V-1s-1) as compared with conventional amorphous Si TFTs. In this research, we report the influence of plasma induced damage during dry-etching (D/E) of source/drain (S/D) electrodes on field effect mobility (��) of the IGZO TFTs.?We fabricated IGZO TFTs with the thickness of SiOx-etching-stopper (ES) layer, which was deposited by plasma-enhanced chemical vapor deposition (PE-CVD), was varied from 100 to 200 nm to change the channel protection ability against the S/D-D/E process. The indium-tin-oxide (ITO) as S/D electrodes were patterned by D/E or wet etching (W/E).?We found that the S/D-D/E induced damage caused an anomalous increase of the �� of the TFT when the ES thickness reduced. In addition, the plasma induced damage into the IGZO channel through thinner ES-layer, and it influenced on the channel resistance, result in an overestimation of ��.?The detailed mechanisms for the anomalous increase of �� will be presented at the conference.
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