Date

Place

[11-4]
15:15 ~ 15:30
Title:Highly Stable Hysteresis-Free Molybdenum Disulfide Field-Effect Transistors
Jeongkyun Roh, In-Tak Cho, Hyeonwoo Shin, Byung Hee Hong, Jong-Ho Lee (Seoul Nat'l Univ., Korea), Sung Hun Jin (Incheon Nat'l Univ., Korea), and Changhee Lee (Seoul Nat'l Univ., Korea)
Abstract: Molybdenum disulfide (MoS2) has been intensively studied as a great candidate for next-generation nano electronic devices due to its promising n-type semiconducting properties with a finite bandgap. One of the main issues of MoS2 FETs is poor electrical and environmental stability. The instability of MoS2 FETs mainly result from the charge trapping on the MoS2 surface which is induced by the organic residues, adsorbed H2O and O2 molecules. Due to the instability caused by extrinsic and environmental effect, revealing intrinsic properties of the MoS2 are still limited.In this study, we demonstrated highly stable hysteresis-free MoS2 FETs by annealing process and sequential polymer passivation. The fabricated MoS2 FETs showed negligible hysteresis even after 100 days stored in ambient air remaining good electron mobility of ~20 cm2/Vs, good on/off ratio larger than 106, and good sub-threshold slope of ~200 mV/dec. This dramatic improvement on the stability was attributed to the removal of existing charge trapping states by annealing process and prevention of adsorption of H2O and O2 molecules to the MoS2 surface by polymer passivation.
PDF Download

Type