Date
Place
- Room D (Room 322)
- 11. 2D Materials: Thin Film Devices
- August 19, 2015 (Wednesday)
- 14:00 ~ 15:45
- [11-3]
- 14:50 ~ 15:15
- Title:[Invited] Interface Properties of Multilayer MoS2 Thin-Film Transistors
- Woong Choi (Kookmin Univ., Korea)
Abstract: There is a great interest in transition metal dichalcogenides (TMDs) such as MoS2 because of their interesting electronic and optical properties. Single or multilayer MoS2 exhibits intriguing characteristics: relatively large bandgap (1.2 - 1.9 eV), high mobility at room temperature (up to ~100 cm2V-1s-1), low subthreshold swing (SS ~70 mV decade-1), and an absence of dangling bonds. However, one of the challenges to realize high performance MoS2 thin-film transistors (TFTs) is the detailed understanding and control of the interfaces of TMDs with contacts and dielectrics. Without the deposition of high-quality dielectrics on TMDs and the formation of low-resistivity metal-MoS2 junctions, any attempts to improve transistor performance can be fundamentally hampered. This talk will present a review of our recent studies of multilayer MoS2 TFTs in this context investigating the selective annealing of Ti/Au metal contacts using picosecond ultra-fast pulsed laser and the variability of electrical properties of Ti contacts.
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