Date

Place

Room C (Room 323)
YLC. Young Leaders Conference
August 20, 2015 (Thursday)
11:00 ~ 12:30

[YLC-5]
11:40 ~ 11:50
Title:Vapor-Phase Deposition of Ultrathin Polymer Gate Dielectrics for High-Performance Flexible Field-Effect Transistors
Hyejeong Seong, Hanul Moon (KAIST, Korea), Won-Tae Park (Dongguk Univ., Korea), Kwanyong Pak, Mincheol Kim, Seungwon Lee (KAIST, Korea), Yong-Young Noh (Dongguk Univ., Korea), Seunghyup Yoo, and Sung Gap Im (KAIST, Korea)
Abstract: Gate dielectrics are an essential component enabling reliable operation of FETs, flash memories, and capacitors in modern electronic systems.?In this work, initiated chemical vapor deposition (iCVD), a dry process with mild process temperature, is applied as an alternative tool to develop ultrathin polymer gate insulators with excellent insulating property.?Ultrathin (< 50 nm) polymer insulators, poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3), poly(ethylene glycol dimethacrylate) (pEGDMA), poly(isobornyl acrylate) (pIBA), and poly(1H, 1H, 2H, 2H-perfluorodecyl acrylate) (pPFDA), were synthesized via iCVD process and exhibited low leakage current densities (Ji) of lower than 10-8 A/cm2 and high breakdown field (Ebreak) over 4 MV/cm. Especially, pV3D3 exhibited excellent insulating properties and high resistance to a tensile strain of up to 4% with the thickness as low as 6 nm. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable the conformal growth of pV3D3 on plastic substrates to yield highly flexible field-effect transistors (FETs). Also the dielectric layers showed good compatibility with a variety of channel layers, including organic and oxide semiconductors.
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