Date

Place

[P2-88]
14:00 ~ 15:30
Title:Investigation of the Green Emission Profile in PHOLED by Gasket Doping
Jootae Park, Kanghoon Kim, Daechoon Kim, Wonhyeok Park, Ukrae Lee, and Sang Soo Kim (Sungkyunkwan Univ., Korea)
Abstract: PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/ Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. The green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2?:CBP system. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. More green light emission at near EML/HBL interface than that of HTL/EML is observed. Excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, T1 level of HBL(2.7eV) is higher than that of EML
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