Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-7]
- 14:00 ~ 15:30
- Title:Effects of Zr Doping on Inkjet-Printed ZnSnO Thin-Film Transistor
- HunHo Kim, Young-Jin Kwack, NamHoon Baek, and Woon-Seop Choi (Hoseo Univ., Korea)
Abstract: Solution-processed ZTO TFTs that are easily inclined to make oxygen vacancies do not show good device performances. It also has poor leakage gate current with increasing drain current. One of effective methods for controlling oxygen vacancies is a material doping considering the SEP, bandgap and electronegativity. We found the optimized doping mole ratio and annealing temperature of Zr into patterned ZTO system (ZZTO) in channel region to control for suitable oxygen vacancies. Mobility, on/off ratio,threshold voltage and sub-threshold voltage of a inkjet-printed 0.0025M ZZTO TFT at 500¡É are 6.43cm2/Vs, 3.72 x 108, 3.35V and 0.53V, respectively. Also we obtained a better bias stress.
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