Date

Place

Room H (Room Hall 1, 1F)
P2. Poster Session II
August 21, 2015 (Friday)
14:00 ~ 15:30

[P2-56]
14:00 ~ 15:30
Title:Enhanced Stability of Indium-Tin-Gallium-Oxide Thin Film Transistors Based on Low Temperature Annealing
Hyun-Jun Jeong, Hyun-Mo Lee, Kyung-Chul Ok (Hanyang Univ., Korea), Junhyung Lim (Samsung Display Co., Ltd., Korea), Johan Cho (Samsung Corning Advanced Glass, Korea), and Jin-Seong Park (Hanyang Univ., Korea)
Abstract: ? Very recently, curved smart phons such as Galaxy note edge and G2 flex have been strongly attracted on display market due to their marvelous designs. On these days, amorphous oxide semiconductors such as In-Ga-Zn-O (IGZO) are rapidly emerging for the fabrication of thin film transistor (TFT) arrays on flexible substrates, as they exhibit higher field effect mobility than conventional amorphous silicon, and are compatible with low temperature processes. However, in order to realize flexible displays, the TFT devices must be fabricated on plastic substrates such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET), which are prone to degradation upon exposure to heat. Yet, it is well known that oxide semiconductors require relatively high annealing temperatures in order to have their electrical properties activated, and the electrical defects to be reduced. ? In this work, the novel In-Sn-Ga-O (ITGO) semiconductors TFTs are investigated with respect to different annealing temperatures. Counterintuitively, their stability with respect to bias stress is improved as the annealing temperature decreases. As annealing temperature decreased, NBS instability (?Vth) also improved from -14.8V to -1.98V. ITGO TFT has sufficient reliability at relatively low temperature process, allowing the realization of flexible display on heat-sensitive plastic substrates.
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