Date

Place

[P2-41]
14:00 ~ 15:30
Title:Variation of Density of States in a-Si:H Thin-Film Transistors by Mechanical Strain
Minsuk Kim, Hyungon Oh, Sukhyung Park, Yoonjoong Kim, Youngin Jeon, Doohyeok Lim, Kyoungah Cho, and Sangsig Kim (Korea Univ., Korea)
Abstract: Unlike crystalline semiconductors, there are a lot of defect states within the bandgap in amorphous semiconductors due to dangling bonds and weak bonds between atoms. The defect states generate localized band-tail states and mid-gap defect states. Moreover, under mechanical strain, the deformation of defect states can be easily occurred, thereby threshold voltage, subthreshold swing and on/off current of amorpous semiconductor TFTs can be substantially affected. Besides, gate-insulating silicon nitride layers also suffer from charge trapping instabilities under the mechanical strain, leading to a shift of the threshold voltage. In our study, we investigate the electrical charateristics of bendable a-Si:H TFTs under compressive or tensile strain. Also, based on the experimetal data, our simulation results using the device simulator (Silvaco ATLAS) are analyzed with variation of density of states or the trapped charge in the silicon nitride layers.
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