Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-37]
- 14:00 ~ 15:30
- Title:High-Mobility CdS Thin-Film Transistors by Sol-Gel Method
- Sung-Min Kwon, Jae-Hyun Kim (Chung-Ang Univ., Korea), Han-Lim Kang (Korea Univ., Korea), Myung-Gil Kim, and Sung-Kyu Park (Chung-Ang Univ., Korea)
Abstract: Solution-processed thin-films have been researched for realization of low-cost, large area, and flexible electronic devices. Recently, various types of materials, organic semiconductors, carbon materials, and oxide semiconductors, have been suggested as cost effective processed semiconducting layer. With composition tuning, metal chalcogenide exhibited various optical and electrical properties for electronic and optoelectronic applications, such as advanced optical memory devices, thin-film solar cell, medical media detector and thin-film transistors. Thus, solution-based chalcogenide thin-film transistors(TFTs) propose to improve 1Transistor-1RAM(1T1R) structure. Moreover, chalcogenide materials have reported high carrier mobility, over 10 cm2/Vs .1,2,3 To achieve general route for solution processed metal chalcogenide films, we investigated novel sol-gel type chalcogenide precursor systems. With our CdS precursor, we achieved high electron mobility TFT.
PDF Download
Type
