Date

Place

[P2-36]
14:00 ~ 15:30
Title:High-Performance 1-D Fiber-Based Thin-Film-Transistors Using Solution-Processed Metal-Oxide Semiconductors and Dielectrics
Chang jun Park, Gyeong min Yi, Jae sang Heo, and Sung kyu Park (Chung-Ang Univ., Korea)
Abstract: Recently, fiber has attracted lots of attention in flexible electronics and displays field due to flexibility, elasticity and availability of large scale. Because of these advantages, fiber-based thin film transistors (FTFTs) can be applied to various applications such as wearable electronics, flexible circuit, skin-like pressure sensors and other application with human body. To demonstrate FTFTs, metal oxide semiconductors (MOS) as channel layer were used because MOS thin-films have high electric performances, good uniformity and availability in solution process.we?show transfer and output current characteristics of solution-processed Al2O3 & IGZO TFTs, The saturation mobility and on-off current ratio of fiber-based IGZO TFTs were 2.50~3.97 cm2/V-s and 3.85x102~6.66x104 respectively. For the first time, we have demonstrated 1-dimensional MOS FTFTs. The FTFTs show good electrical characteristics that high carrier mobility and on-off current ratio. In addition, we are researching integrated circuits that inverter by using two MOS FTFTs
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