Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-32]
- 14:00 ~ 15:30
- Title:Electrical Properties of the Thin-Film Transistor with Copper-Indium Oxide Channel
- Inje Cho, K. Mageshwari, and Jinsub Park (Hanyang Univ., Korea)
Abstract: We fabricated the TFT with CuInO2?based active layer with both conductivity?with change of the n-type to p-type.?From the output characteristics of both TFT, we can confirm the change of electrical polarity of CuInO2?by change of indium composition. In order to improve the device performance of TFT, we adopted graphene as a electrode for source and drain region. The fabricated TFT with graphene electrode shows the superior conductivity than reference samples.
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