Date

Place

[P2-3]
14:00 ~ 15:30
Title:Process Optimization for Improving TFT Bad Pattern
Dan liu, Hang Li, Gang Qin, Jun-Jun Lv, Yi Rao, Tao Liu, Chao Zhang (Chongqing BOE Optoelectronics Co., Ltd., China), and Zhan-feng Cao (BOE Tech. Group Co., Ltd., China)
Abstract: ?? Generally we wanted CD bias of under 1.5um at one of the over etch (OE) ratio from 40% to100%, but we get large CD bias and bad metal profile at the initial etchant of 4.5% HNO3 and 40%OE. In order to improve etch CD bias, photo condition and new PR are used for improving the adhesion of PR and metal, and besides the etchant of different HNO3 concentration is evaluated. The experiment is processing on the glass with gate metal deposition (Mo/Al/Mo), and gate mask is processing under different condition, such as PR material and soft bake temp, dev. time and post bake use. CD before etch and after etch process is measured with optical equipment for computing CD bias.? Photo condition tuning has no effect to decrease CD bias. After we decrease HNO3 conteration to 3.2% and 2.5%, CD bias will decrease to the spec but metal profile will become bad at 2.5% HNO3.??So we set up a suitable etchant (HNO3 3.2%) for good TFT pattern in high gerenation.
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