Date

Place

Room H (Room Hall 1, 1F)
P2. Poster Session II
August 21, 2015 (Friday)
14:00 ~ 15:30

[P2-29]
14:00 ~ 15:30
Title:Solution-Processed, Unpurified, Semiconducting Enriched Single Walled Carbon Nanotube Field Effect Transistors and Their Electrical Characteristics
Geun Woo Baek, Hyeun Woo Kim, Yoon Gy Hong, You-Beom Lee, In Jae Yim, Jae Hyeon Ryu, Gi Taek Yu, and Sung Hun Jin (Incheon Nat'l Univ., Korea)
Abstract: ?Recently solution processed single walled carbon nanotubes(SWNTs)1 have attracted great attention for their excellent electrical and mechanical properties. However, most of devices and circuits, reported in the literatures1, have been implemented with highly purified, solution-processed SWNTs which typically resulted in deterimental effects associataed with intrinsic field effect mobility degradation (��eff) and reduction of average length (~a few ��m) of SWNTS. Even though high on-off ratio (Ion/Ioff >105) for SWNT field effect transistors(FETs) can be typically achived by using highly purified SWNTs solution2 (~98%), the cost-ineffectiveness and intrinc device reliability issues caused by defect generation in SWNTs associated with harsh purification process (i.e, mechanical (or/and chemical) treatments) should be potentially addressed and resolved for the competative electronic applications including large area, advanced flat panel displays. However, there has been few reports on solution-processed FETs based on unpurified and semiconducting enriched SWNTs, thereby, in this work, we prepared semiconducting enriched single walled nanotubes by using novel chemical vapor deposition, followed by solution-type single walled nanotubes preparation. For the evaluation of electrical properties of semiconduting enriched single walled nanoubes, we implemented field effect transistors with channel length ranging from 5 ��m to 200 ��m, immediately followed by electrical characteristics. Fig.1(a) shows scannig electron microscope image of SWNTs with average length (~more than 10 ��m) SWNTs, which indicates intrinsic long length of SWNTs are nicely preserved even after solution process. Fig. 1(b) shows that typically high current on/off ratio, in the range from 5 to 50, is observed compared with as-grown CVD based SWNTs, which has typical on/off ratio (less than 2). The data substatiate that unpurified SWNTs have semiconducting enriched SWNTs. Stipping process3 to increase on/off ratio upto 106 ?has been underway and their electrical charcteristics depending on average SWNTs density, length, physical dimension (~width to length ratio) are systematically analyzed and plan to be reported later.? ?
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