Date

Place

Room H (Room Hall 1, 1F)
P2. Poster Session II
August 21, 2015 (Friday)
14:00 ~ 15:30

[P2-27]
14:00 ~ 15:30
Title:Different Characteristics of Zinc Tin Oxide Thin Film by the Effect of Fabricating Method; Mist-CVD and Spin Coating
Jae-Yoon Bae, Keun-Tae Oh, and Jin-Seong Park (Hanyang Univ., Korea)
Abstract: Mist-CVD (Mist chemical vapor deposition) and spin coating are employed to fabricate Zinc tin oxide thin films. Thin film analysis was taken to see the different characteristics depending on the methods. The solution for both Mist-CVD and spin-coating were made by tin chloride and zinc chloride (5:5) as solute and acetone and DI water as solvent. Zinc tin oxide thin film deposited by Mist-CVD and spin coating on silicon substrate above 350oC showed different crystallization. X-ray diffraction of Zinc tin oxide thin film using Mist-CVD showed polycrystalline, while spin-coating method showed amorphous phase. X-ray photoelectron spectroscopy was investigated to see the chemical composition of the thin film. Thin film transistors (TFTs) were made to see the transfer characteristics of zinc tin oxide. Thin-film transistor made by mist-CVD at 350 oC showed a mobility of 14.61 cm2 V?1 s?1 in the saturation region, a subthreshold swing (SS) of 0.99 V/decade and a threshold gate voltage (Vth) of 3.24 V. On the other hand, thin-film transistor made by spin coating showed a low mobility at 350 oC compare to mist-CVD which had a mobility of 6.88 cm2 V?1 s?1 in the saturation region, a subthreshold swing (SS) of 0.47 V/decade and a threshold gate voltage (Vth) of 3.33 V.
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