Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-24]
- 14:00 ~ 15:30
- Title:Annealing Process Development for Amorphous InWO Thin Film Transistors
- Ling Xu, Qi Wu, Haiting Xie, Jianeng Xu (Shanghai Jiao Tong Univ., China), Qun Zhang (Fudan Univ., China), and Chengyuan Dong (Shanghai Jiao Tong Univ., China)
Abstract: Recently amorphous InWO (a-IWO) thin film transistors (TFTs) were proved to show high field-effect mobility (¥ìFE) and stable properties, implying their potential applications in active matrix flat panel displays . However, the influence of processing conditions on the electrical performance of a-IWO TFTs is still unclear. In this study, the effect of annealing conditions including annealing temperature and annealing time in air on the performance of a-IWO TFTs was investigated in detail, where the related physical mechanisms were analyzed with studying the microstructures and properties of a-IWO films.
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