Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-21]
- 14:00 ~ 15:30
- Title:Low Temperature Fabrication of High Pressure Activated In-Ga-Zn-O Thin Film Transistors
- Won-Gi Kim, Young Jun Tak, Tae Soo Jung, Sung Pyo Park, Heesoo Lee, Jeong Woo Park, and Hyun Jae Kim (Yonsei Univ., Korea)
Abstract: Lowering the temperature to fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) without degrading its electrical performance and stability is important issue to make flexible electronic devices. We investigated the effect of high-pressure annealing (HPA) as a source of activation energy to form the a-IGZO active layer at 100oC. This approach involves that annealing under pressure by oxygen (O2) gas can be used to improve stability under positive bias stress (PBS) as well as energy source
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