Date

Place

[P2-2]
14:00 ~ 15:30
Title:Optical- and Electrical Properties of ZnOxNy Films Grown by Atomic Layer Deposition
Soo Hyun Kim, Jung Joon Pyeon, Jin-Sang Kim, and Seong Keun Kim (KIST, Korea)
Abstract: ZnO has been attracted as an active channel of thin film transistors (TFTs) for realizing transparent display panels and flexible electronics due to its wide band gap energy (Eg = 3.36 eV) and low temperature process.?Recently, it was reported that the incorporation of nitrogen into ZnO films significantly improved the electronic mobility and photostability. Therefore, we suggest atomic layer deposition (ALD) of ZnOxNy films for the improvement of the electrical properties. We deposited ZnOxNy films by ALD with DEZ, H2O and NH3 at 150 oC. For controlling the incorporation of nitrogen into ZnO, a cycle ratio (RH2O/NH3) of [DEZ-H2O]:[DEZ-NH3] varied from 1:0 to 1:9. A growth per cycle of the ZnO films increased with RH2O/NH3 despite no formation of Zn3N2 by ALD at this temperature. The optical band-gap was controlled even at a very low RH2O/NH3. Also, electrical properties of ZnOxNy films were changed systematically by the variation in the RH2O/NH3.
PDF Download

Type