Date

Place

Room H (Room Hall 1, 1F)
P2. Poster Session II
August 21, 2015 (Friday)
14:00 ~ 15:30

[P2-19]
14:00 ~ 15:30
Title:Improvement the Electrical Characteristics of Thin Film Transistors Utilizing an Ultra-thin High Conductivity Layer at the Active/Insulator Interface
Cam Phu Thi Nguyen, Jayapal Raja, Sunbo Kim, Kyungsoo Jang, Thanh Thuy Trinh, and Junsin Yi (Sungkyunkwan Univ., Korea)
Abstract: This study examines the performance and the bias stability of double-channel ITO/ ITZO TFTs.The insert of ultra-thin ITO layer on ITZO TFTs exhibit superior field effect mobility (approximately ~75.5 cm2/Vs) to that of the ITZO only TFTs (~33.4 cm2/Vs). The improvement of electrical properties are shown not only in field effect mobility but also in other parameters such as subthreshold slope (SS = 0.39 V/dec), ON/OFF current ratio (ION/IOFF = ~108), and interface trap density (Nit = 7.88��1011 cm?2) in comparison with the single ITZO active layer (SS = 0.56 V/dec, ION/IOFF = ~107, and Nit = 1.82 �� 1012 cm?2). Furthermore, the threshold voltage shifts for the ITO/ ITZO double layer device decrease from 6.63 and -6.79 V (for ITZO only device) to 1.35 and -2.69V under positive and negative bias stress, respectively. The number of electron in the ITZO layer has been increased due to the electrons injection from the high conductivity ITO layer and the interfacial trap density can be decreased by the insert ion of a very thin ITO ?lm into the ITZO/SiO2 reference device. Therefore, the double-stacked active layer is a promising approach for achieving highly stable as well as high performance TFT devices.
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