Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-149]
- 14:00 ~ 15:30
- Title:Device Characteristics of CZTSSe Thin-Film Solar Cells with 8% Conversion Efficiency
- Dae-Ho Son and Dae-Hwan Kim (DGIST, Korea)
Abstract: Cu2ZnSnS4 (CZTS) and Cu2ZnSn(S,Se)4 (CZTSSe) films were fabricated on Mo-coated glass substrates by sputtering using compound material targets. The fabrication method combines the deposition of metallic precursors and the sulfurization or selenizaion annealing process using S or Se vapor. The optimal precursor stacking sequence for CZTS growth was found to be Cu/SnS/ZnS/Mo. To optimize the composition and thickness of absorber layer, the Cu thickness was varied from 60 to 120 nm and thickness of the precursor was changed. Through the annealing process, the best devices on CZTS and CZTSSe films demonstrated an efficiency of 3.84 % and 8.06 %, respectively.
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