Date

Place

[P2-134]
14:00 ~ 15:30
Title:Effect of Doping Profile on the Emission Mechanism and Efficiency of Green Phosphorescence Organic Light-Emitting Diodes
Wonhyeok Park, Kanghoon Kim, Jootae Park, Daechoon Kim, Ukrae Lee, and Sang Soo Kim (Sungkyunkwan Univ., Korea)
Abstract: PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB (50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm)with different locations of doping zone are fabricated to investigate the emission mechanism and efficiency of green PHOLEDs.The EMLs are formed by deposition of CBP with a 5nm thick Ir(ppy)3(2% wt) doping zone.The distance from the HTL/EML interface to this doping zone(x) is changed from 0nm to 25nm in 5nm steps.The position of the doping layer was correlated with the light emission mechanism and device performance.The injection and transport characteristics of the hole are the major limit factors on emission efficiency.
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