Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-11]
- 14:00 ~ 15:30
- Title:Improvement of NBTIS Stability in Sandwiched Active Structure with Al2O3 Interlayer in Solution Processed Oxide TFTs
- Dongha Kim, Hyungjin Park (KAIST, Korea), Jungho Jin (Univ. of Ulsan, Korea), and Byeong-Soo Bae (KAIST, Korea)
Abstract: In order to improve the NBIS and NBTIS-induced TFT stability, Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide thin films to form a sandwiched triple layer. The Al2O3 layer acts as a photo-induced positive charge blocking layer. All the thin films were fabricated by sol-gel process.
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