Date

Place

Room H (Room Hall 1, 1F)
P2. Poster Session II
August 21, 2015 (Friday)
14:00 ~ 15:30

[P2-10]
14:00 ~ 15:30
Title:Active Layer of Conductive In2O3 Channel Covered with ZrO2 Insulating Thin Film in Solution Processed TFT Application
Hyungjin Park, Ki-ro Yoon, Il-Doo Kim, and Byeong-Soo Bae (KAIST, Korea)
Abstract: We report an unique combination of bilayer stucture for conventional bottom-gate top-contact TFT. An In2O3 layer, conductive binary oxide, was employed as channel and abundant electon carriers are controlled by insulating ZrO2 layer coated onto In2O3. Both In2O3 and ZrO2 layer were fabricated by solution-process and annealed at 400oC for 1 hour, respectively. Single In2O3 TFT without ZrO2 layer is less depend on gate bias showing high current attributed to high carrier concentration. Meanwhile, in case of the In2O3 TFT with ZrO2 layer represented the enhanced switching property with clear on/off state indicating that the ZrO2 layer contols the conductivity of the channel rather than electrically passivates the current fom the channel. Furthermore, the effect of ZrO2, which transmutes conducting into semiconducting oxide, is verified with In2O3 nanowire network as a channel layer. Electrospun nanowires are annealed at 600oC in oxygen atmosphere resulting in thickness of nanowire ca. 40 nm. ZrO2 layer is coated onto nanowire network using the same method above-mentioned. The saturation mobility of In2O3 nanowire/ZrO2 TFT was 15 cm2V-1s-1 and current on/off ratio was ~108. Material properties of In2O3/ZrO2 bilayer structure and underlying mechanism based on energy band structure will be discussed.
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