Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-64]
- 14:00 ~ 15:30
- Title:Fabrication of X-Ray Detector for Real Time Image Sensing with a-IGZO TFT
- Hyoung-seok Choi, Myeong-ho Kim, Ji-hwan Jung, and Duck-kyun Choi (Hanyang Univ., Korea)
Abstract: ?We investigated the digital x-ray detector with a-IGZO TFTs to drive digital X-ray detector. The amorphous silicon based thin film transistors (a-Si TFTs) have been applied for conventional digital X-ray detectors. However, the a-Si TFTs has low mobility (< 1 cm2/Vs) and driving speed?whose factors are related?to detector signal noise, sensing speed and sensitivity. The amorphous-oxide-semiconductor (AOS) provides a new technology choice for the high TFTs electrical performance. Amorphous indium-gallium-zinc-oxide (a-IGZO) is considered as one of the most promising active layer material for oxide TFTs because of?their high mobility (> 10 cm2/Vs), good uniformity and high transparency.?X-ray detector with a-IGZO?can?reduces amounts of radiation dose and drive real time X-ray images.
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