Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-54]
- 14:00 ~ 15:30
- Title:An Electrochemical Study on Copper Multi-Layer Wet Patterning in Phosphoric Acid Solution for LTPS and Metal-Oxide TFTs Application
- Byoung O?Kim (Korea Aerospace Univ., Korea), Moo Soon?Ko, IlJeong?Lee (Samsung Display Co., Ltd., Korea), Jeorg?Winkler (Plansee SE, Korea), and Jong Hyun?Seo (Korea Aerospace Univ., Korea)
Abstract: The wet etching behaviors of Mo alloy/Cu/ Mo alloy tri-layers were investigated for the application of a gate electrode in low temperature poly-silicon. The tri-layers were patterned in a phosphoric acid based copper wet etchant. The Mo alloys over 50 at% aluminum contents showed excellent wet patterning performances as 0.7 um in skew and 0.5 um tail due to reduced galvanic potential difference with copper layer in the wet etchant (Fig.1). The new Mo ternary alloy/Cu/Mo ternary alloys showed good heat resistance of 2.5 uohm-cm after 500oC for 1 hour post annealing process without forming an intermetallic compound with copper layer. The effect of alloying element on the wet patterning of molybdenum ternary alloy/copper/molybdenum ternary alloy tri-layers were interpreted in terms of mechanical stability of the wet etching by-product film formed on the surface and the effect of etchant additives were also examined. In addition, the fabrication of etch back type In-Ga-Zn-O TFT with molybdenum alloy S/D were investigated with varying the wet etchant composition.
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