Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-50]
- 14:00 ~ 15:30
- Title:High Performance Bottom Contact Organic Thin Film Transistor
- Sihan Wang, Eung-Kyu Park, Ji-Hwan Kim, Jin-Ho Kim, and Yong-Sang Kim (Sungkyunkwan Univ., Korea)
Abstract: In organic thin film transistor, top contact devices have demonstrated superior characteristic than bottom contact devices while?bottom contact?devices have more commericial potential than?top contact?devices. As photolithography has to be used when defining the contacts and pentacene is intolerant to the processing solvents, improving the property of?bottom contact devices is promising for industrial utility.?In this work,?top contact?and?bottom contact?organic thin film transistors were fabricated. For bottom contact devices,?hexamethyldisilazane (HMDS) and poly (3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) was coated after gold source and drain deposition followed by pentacene deposition. HMDS enlarged the grain size on gate insulator and gold electrodes while PEDOT:PSS reduced hole injection barrier and reduced the contact resistance. As a result,?HMDS and PEDOT:PSS coated?bottom contact?devices showed better performance than?top contact?devices and low threshold voltage which can be a potential candidate in industrial application.
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