Date

Place

Room H (Room Hall 1, 1F)
P1. Poster Session I
August 20, 2015 (Thursday)
14:00 ~ 15:30

[P1-46]
14:00 ~ 15:30
Title:Atomic Layer Deposited Indium Zinc Oxide Thin Films and the Associated Device Performances
Seung-Hwan Lee, Jung-Hoon Lee, Sheng Jiazhen, and Jin-Seong Park (Hanyang Univ., Korea)
Abstract: Recently, amorphous oxide semiconductors as active layers have been already mass-produced in AMLCD and AMOLED due to reasaonable field effect mobility (>10cm2/v.s) and simple deposition process. In active channel layers, sputtering techniques had been natural limitations for controlling multicompositions and defect-generations on large-size backplanes. To solve probelms such as oxygen defect-generation, non-uniform compositions, and unreliable device performances, a few reserachers have suggested vapor deposition methods like CVD and ALD. ALD is well-known to be exact thickness control, composition, and less-defect due to self-limiting and complement reactions. In this work, ALD Indium Zinc Oxide (IZO) thin films were depsoited by using liquid In and Zn prerusror. The ozone was used as an oxygen reactant. The IZO films was investigated with various In/Zn contents (5:1. 3:1, 2:1, 1:1, 1:2, 1:3, 1:5) at 150oC, resulting in different electrical/physical properties. The associated TFT exhibited , saturation mobility of 3.40 cm2 V?1 s?1 in the saturation region was obtained, with an subthreshold swing 0.45 V/decade, a thresholdgate voltage of 1.77 V and an on/off ratio of 9.24 �� 105, while the as-deposited turned to be a semiconducting property at 500oC annealing. This presentation will be discussed physical/chemical/electronic properties related with IZO TFT performances. ?
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