Date

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[P1-40]
14:00 ~ 15:30
Title:Analysis of Hump Characteristics Induced Self-Heating and Charge Trapping in Bottom-Gate Etch-Stopper a-IGZO TFTs after Simultaneous Positive Gate and Drain Bias Stress
Jonghwa Kim, Jun Tae Jang, Sungju Choi, Jungmok Kim, Hara Kang, Sung-Jin Choi, Dong Myong Kim, and Dae Hwan Kim (Kookmin Univ., Korea)
Abstract: ?Simultaneous positive gate and drain bias stress (SPGDBS) is the most important instability in active-matrix organic light-emitting diode (AMOLED) displays. In this work, SPGDBS (VGS/VDS= 25 V/25 V) induced degradation is investigated in the bottom-gate (BG) etch-stopper (ES) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). After SPGDBS, both the positive shift and the hump of transfer curve were observed. In addition, it was observed that the magnitude of hump threshold voltage shift at reverse sweep increased with the increase in channel width. The results are attributed to the combination of donor creation near the drain by the increase in self-heating and the electron trapping into the gate insulator. The mechanisms discussed in our study are expected to be useful in characterizing the long-term instability of the BG ES a-IGZO TFT-driven AMOLED display backplanes.
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