Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-38]
- 14:00 ~ 15:30
- Title:Amorphous InGaZnO Thin Film Transistors with Sputtered Silver Electrodes
- Qi Wu, Ling Xu, Jianeng Xu, Haiting Xie (Shanghai Jiao Tong Univ., China), Shan Li, Chang-Cheng Lo (Shenzhen China Star Optoelectronics Tech. Co., Ltd., China), A. Lien (TCL Corporate Research, China), and Chengyuan Dong (Shanghai Jiao Tong Univ., China)
Abstract: It is very important to develop low-resistive electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs) to drive large-size flat panel displays. For its best conductivity Ag should be a good candidate serving as the gate and source/drain (S/D) electrodes of a-IGZO TFTs. Recently some related studies by our group and the other researchers [1] have been reported but unfortunately none of their fabrication methods adopted sputtering, the most likely preparation technique for industrial productions. In this study, the a-IGZO TFTs with sputtered Ag/Ti or Ag/Mo bilayer S/D electrodes were prepared and investigated in detail.
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