Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-36]
- 14:00 ~ 15:30
- Title:General Plasma Doping Strategy for Two-Dimensional Transition Metal Dichalcogenides Based on Self-Assembled Nanostructures
- Soonmin Yim, Dong Min Sim, and Yeon Sik Jung (KAIST, Korea)
Abstract: Modification of electrical and optical properties of transition metal dichalcogenides (TMDs) while maintaining its two-dimensionality is essentially required to apply it to various applications. However, there exist significant challenges for achieving the stability, uniformity, and non-degenerated doping level. Herein, we report universal doping approach for various TMDs (MoS2, and WS2) via well-controlled nanostructures fabricated from block copolymer (BCP). These nanostructures can passivate nanoscale local areas on the surface of TMDs during a plasma-based doping process. The scale and geometry of BCP nanostructures is determined by total molecular weight and volume fraction of each block. Moreover, they contribute to the conservation of intrinsic matrix simultaneously. We employed argon and oxygen plasma to partially remove sulfur atoms from MoS2 and to add oxygen atoms for modifying the optical and electrical properties. As a result, our method controls the effective plasma-influenced area and can adjust electron concentration from 1.9¡¿1011 cm-2 to 8.11¡¿1011 cm-2 via the generation of extra carriers. Based on the controllability of BCP pattern coverage and plasma treatment time and sources, a similar approach can be applied to other TMDs for the facile modulation of electronic properties.
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