Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-34]
- 14:00 ~ 15:30
- Title:Carrier Control of Defective Few-Layer MoS2 by Thiol Molecule Chemisorption
- Dong Min Sim, Soonmin Yim, and Yeon Sik Jung (KAIST, Korea)
Abstract: We demonstrate the facile chemical doping method for modulating carrier concentration and electrical properties of FETs based on defect-containing MoS2 using thiol chemistry. For example, sulfur vacancy of MoS2 can act as useful sites for hydrodesulfurization. Thus, thiol molecules with various functional groups which can act as a surface charge transfer donor can be easily absorbed and tightly bound to defect sites of MoS2. We therefore chose thiol molecules containing an NH2 group, which has lone electron pairs and can donate electrons to MoS2. As a result, the carrier density increased 3 fold (from 6.65¡¿1012 /cm2 to 1.86¡¿1012 /cm2) and field effect mobility also increased from 0.59 cm2/Vs to 1.64 cm2/Vs after doping in Figure 1. This method can be used to effectively modulate the conductivity, carrier mobility, and carrier density in few-layer MoS2.
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