Date

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[P1-32]
14:00 ~ 15:30
Title:The Effect of Various Passivation Layers to the Stability of the MoS2 Field-Effect Transistor
Geonho Kim, Ah-Jin Cho, and Jang-Yeon Kwon (Yonsei Univ., Korea)
Abstract: MoS2 has attracted great attention and there are many reports on MoS2 transistors which show high carrier mobility. Also, its potential to be utilized in optoelectronics and other various applications was proved. However MoS2 has a critical weakness in that the stability under ambient condition is very poor. The resistance of MoS2 transistor increases under ambient atmosphere, which results in the decrease of field-effect mobility. Preventing the degradation of device performance is very important in order to avoid circuit failure or to reduce the power consumption. In this research, we have focused on the stability enhancement of a MoS2 field-effect transistor (FET). Various passivation layers were deposited on top of the bottom-gate MoS2 FET. Then, the evolution of electrical properties for both transistors with and without passivation layer was measured. In addition, the change of device properties under high percentage of humidity condition was measured in order to compare the performance of diverse passivation layers. From this research, the effect of various passivation layers to the environmental stability of MoS2 transistor will be reported.
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